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| 2SD2065 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2065
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(on) Base -Emitter On Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
hFE-3
DC Current Gain
IC= 5A; VCE= 5V
fT
Current-GainâBandwidth Product IC= 0.5A; VCE= 5 V; f= 1MHz
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
 hFE-2Classifications
Q
S
P
60-120 80-160 100-200
MIN TYP. MAX UNIT
2.0
V
1.8
V
50 μA
50 μA
20
60
200
20
20
MHz
110
pF
isc Websiteï¼www.iscsemi.cn
2
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