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| 2SD2060 Datasheet, PDF (2/4 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=3A;VCE=5V
VCB=80V; IE=0
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
 hFE-1 Classifications
R
O
Y
40-80
70-140 120-240
Product Specification
2SD2060
MIN TYP. MAX UNIT
80
V
5
V
0.45 1.5
V
1.0
1.5
V
30
A
100
A
40
240
15
50
8.0
MHz
90
pF
2
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