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| 2SD2058 Datasheet, PDF (2/4 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A;VCE=5V
ICBO
Collector cut-off current
VCB=60V;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A; IB1=-IB2=0.2A
VCC=30V ,RL=15
 hFE Classifications
O
Y
G
60-120 100-200 150-300
Product Specification
2SD2058
MIN TYP. MAX UNIT
60
V
1.5
V
3.0
V
10
A
1.0
mA
60
3.0
MHz
35
pF
0.65
s
1.30
s
0.65
s
2
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