2SD201 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD201
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
ICBO
Collector Cutoff Current
VCB= 90V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5.0V; IC= 0
hFE-1
DC Current Gain
IC= 3A ; VCE= 4V
hFE-2
DC Current Gain
IC= 6A ; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.5A ; VCE= 10V;f= 0.5MHz
MIN MAX UNIT
60
V
1.0
V
2.0
V
1.5
V
1.0 mA
0.1 mA
0.1 mA
20 100
5
3.0
MHz
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