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| 2SD198 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=1.0A; IB=0.1A
VBEsat Base-emitter saturation voltage
IC=1.0A; IB=0.1A
ICBO
Collector cut-off current
VCB=300V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=0.1A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2SD198
MIN TYP. MAX UNIT
300
V
6
V
1.0
V
1.5
V
0.1 mA
0.1 mA
30
300
25
MHz
2
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