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| 2SD1933 Datasheet, PDF (2/3 Pages) Rohm – Power Transistor (-80V, -4A) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1933
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=50μA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA;IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=4mA
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=2A ; VCE=3V
fT
Transition frequency
IE=-0.2A ; VCE=5V;f=10MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
80
V
80
V
1.5
V
100 μA
3.0 mA
1000
10000
40
MHz
35
pF
2
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