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| 2SD1850 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – SILICON NPN TRIPLE DIFFUSED PLANAR TYPE HORIZONTAL DEFLECTION OUTPUT | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1850
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=B 1.5A
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 1000V; IE= 0
VCB= 1500V; IE= 0
fT
Transition Frequency
IC= 1A; VCE= 10V
Switching Times, Resistive Load
ts
Storage Time
tf
Fall Time
IC= 6A; IB1= 1.5A; IB2= -3A,
VCC= 200V
MIN TYP MAX UNIT
7
V
8.0
V
1.5
V
5
25
4.5
10 μA
1.0 mA
2
MHz
1.5
μs
0.2
μs
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