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| 2SD1841 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1841
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= â
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat) Base -Emitter Saturation Voltage
IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 10A; VCE= 2V
MIN TYP. MAX UNIT
100
V
110
V
6
V
0.8
V
1.5
V
100 μA
100 μA
50
140
20
 hFE-1 Classifications
P
Q
50-100 70-140
isc Websiteï¼www.iscsemi.cn
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