2SD1828 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO Collector-base breakdown voltage
I_C=5mA; I_E=0
V_(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=
V_CEsat Collector-emitter saturation voltage I_C=1.5A ; I_B=3mA
V_BEsat Base-emitter saturation voltage
I_C=1.5A ; I_B=3mA
I_CBO
Collector cut-off current
V_CB=80V;I_E=0
I_EBO
Emitter cut-off current
V_EB=5V;I_C=0
h_FE
DC current gain
I_C=1.5A ; V_CE=3V
f_T
Transition frequency
I_C=1.5A ; V_CE=5V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=500I_B1=-500I_B2=1A
V_CC=50V ,R_L=50
Product Specification
2SD1828
MIN TYP. MAX UNIT
110
V
100
V
0.9
1.5
V
2.0
V
0.1 mA
3.0 mA
1500 4000
20
MHz
0.8
s
5.0
s
1.2
s
2