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| 2SD1793 Datasheet, PDF (2/2 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(10A NPN) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1793
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 10mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
1.5
V
2.0
V
0.1
mA
ICEO
Collector Cutoff Current
VCE= 100V; IB= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
5
mA
hFE
DC Current Gain
IC= 5A, VCE= 3V
1500
30000
fT
Current-GainâBandwidth Product IC= 1A; VCE= 10V
20
MHz
Switching Times; Resistive Load
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 5A; IB1= 5mA; IB2= 10mA;
VBB2= 4V; RL= 6Ω
2
μs
12
μs
5
μs
isc Websiteï¼www.iscsemi.cn
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