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| 2SD1773 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For midium speed switching) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1773
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=2A , L=10mH
120
V
V(BR)EBO Emitter-base breakdown voltage
IE=50mA ;IC=0
7
V
VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=8mA
1.5
V
VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA
3.0
V
VBEsat-1 Base-emitter saturation voltage
IC=4A ;IB=8mA
2.0
V
VBEsat-2 Base-emitter saturation voltage
IC=8A ;IB=80mA
3.5
V
ICBO
Collector cut-off current
VCB=120V ;IE=0
100
A
ICEO
Collector cut-off current
VCE=100V ;IB=0
10
A
hFE
DC current gain
IC=4A ; VCE=3V
1000
20000
fT
Transition frequency
IC=0.5A ; VCE=10V,f=1MHz
20
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A ;IB1=8mA
IB2=-8mA; VCC=50V
0.7
s
6.0
s
2.0
s
2
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