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| 2SD1769 Datasheet, PDF (2/2 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1769
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= 3A ,IB= 3mA
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A ,IB= 3mA
ICBO
Collector Cutoff Current
VCB= 120V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
fT
Current-GainâBandwidth Product
Switching Times
IC= 3A ; VCE= 2V
IE= -0.2A ; VCE= 12V
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A ,RL= 10Ω,
IB1= -IB2= 3mA,VCC= 30V
MIN TYP. MAX UNIT
120
V
1.5
V
2.0
V
10 μA
20 mA
2000
100
MHz
0.5
μs
5.5
μs
1.5
μs
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