2SD1764 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1764
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
MIN TYP. MAX UNIT
50
70
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
50
70
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
COB
Output Capacitance
IC= 1A; IB= 1mA
2.0
V
VCB= 40V; IE= 0
1
μA
VEB= 5V; IC= 0
3.0
mA
IC= 1A; VCE= 2V
1000
10000
IE= 0 ; VCB= 10V,ftest= 1MHz
25
pF
isc website：www.iscsemi.com
2 _{isc & iscsemi is registered trademark}