 English |
|
|
|
|
|
|
|
| 2SD1761 Datasheet, PDF (2/3 Pages) Rohm – TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50μA , IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50μA , IC=0
VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A
VBEsat Base-emitter saturation voltage
IC=2A IB=0.2A
ICBO
Collector cut-off current
VCB=60V IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V ,f=1MHz
 hFE Classifications
D
E
F
60-120 100-200 160-320
Product Specification
2SD1761
MIN TYP. MAX UNIT
60
V
80
V
5
V
1.0
V
1.5
V
10
μA
10
μA
60
320
8
MHz
90
pF
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese