2SD1372 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1372
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
300
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.2
V
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
0.1 mA
hFE
DC Current Gain
IC= 1A ; VCE= 5V
30
100
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V, ftest= 1MHz
5
MHz
Switching Times ;Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 1A;IB1= 0.2A; IB2= -0.4A;
VCC= 250V
0.2
μs
2.0
μs
0.4
μs
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