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| 2SD1290 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=500mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.75A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.75A
ICBO
Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
hFE
DC current gain
IC=2A ; VCE=10V
ts
Storage time
tf
Fall time
IC=2A
ILeak=0.75A,LB=5 H
VF
Diode forward voltage
IF=-4A,IB=0
Product Specification
2SD1290
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
50
A
1
mA
3
8
3
7
s
1
s
2.2
V
2
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