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| 2SD1190 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1190
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= â
60
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
70
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 4mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 2A; IB=B 4mA
VCB= 40V; IE= 0
2.0
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE
DC Current Gain
IC= 2A; VCE= 2V
2000
fT
Current-GainâBandwidth Product
IC= 2A; VCE= 5V
20
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
0.6
μs
IC= 2A, IB1= -IB2= 4mA
RL= 10Ω; VCC= 20V;
2.7
μs
PW= 50μs; Duty Cycleâ¤1%
1.6
μs
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