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| 2SD1186 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
ICES
Collector cut-off current
VCE=1500V; RBE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=0.3A ; VCE=5V
Switching times
tf
Fall time
ts
Storage time
IC=4A ;IB1=0.8A; IB2=-2A
Product Specification
2SD1186
MIN TYP. MAX UNIT
6
V
800
V
5.0
V
1.5
V
0.5
mA
0.1
mA
10
30
1.0
s
1.0
s
2
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