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| 2SD1172 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – SI NPN TRIPLE DIFFUSED JUNCTION MESA | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1172
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
5
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 750V ; IE= 0
VCB= 1500V ; IE= 0
hFE
DC Current Gain
IC= 2.5A; VCE= 10V
5
VECF
C-E Diode Forward Voltage
IF= 4A
tf
Fall Time
tstg
Storage Time
IC= 2.5A, IBend= 0.8A, LB= 5μH
V
4.0
V
1.5
V
50 μA
1
mA
18
2.5
V
0.8 μs
10 μs
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