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| 2SD1135 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=â
V(BR)EBO Emitter-base breakdown votage
IE=10μA; IC=0
VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.2 A
VBE
Base-emitter voltage
IC=1A ; VCE=5V
ICBO
Collector cut-off current
VCB=80V; IE=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=0.1A ; VCE=5V
Cob
Collector output capacitance
IC=0; VCB=20V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=5V
 hFE-1 classifications
B
C
60-120
100-200
Product Specification
2SD1135
MIN TYP. MAX UNIT
80
V
5
V
2.0
V
1.5
V
0.1 mA
60
200
35
40
pF
10
MHz
2
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