2SD1095 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
isc Product Specification
2SD1095
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 1A; IB= 0.2A
VCB= 1200V; IE= 0
VCB= 1200V; IE= 0; TC=125℃
VCE= 800V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 5V
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
Pulsed: Pulse duration = 300 ms, duty cycle = 2.0 %
Switching times; Resistive Load
tr
Rise Time
ts
Storage Time
IC= 1A ;IB1=-IB2= 0.3A; VCC= 400V;
tf
Fall Time
MIN MAX UNIT
1200
800
7
1.5
V
2.0
V
0.1
1
mA
0.1 mA
0.1 mA
10
8
0.5 μs
3.5 μs
0.8 μs
isc website：www.iscsemi.com
2 _{isc & iscsemi is registered trademark}