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| 2SD1060 Datasheet, PDF (2/4 Pages) Unisonic Technologies – NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
ICBO
Collector cut-off current
VCB=40V;IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=-5V
Switching times
ton
Turn-on time
ts
Storage time
IC=2.0A; IB1= IB2=0.2A
tf
Fall time
 hFE-1 classifications
Q
R
S
70-140 100-200 140-280
Product Specification
2SD1060
MIN TYP. MAX UNIT
50
V
60
V
6
V
0.4
V
0.1
mA
0.1
mA
70
280
30
100
pF
30
MHz
0.1
s
1.4
s
0.2
s
2
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