2SD1040 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1040
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
ICBO
Collector Base Cutoff Current
VCB=150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC= 0
hFE -1
DC Current Gain
IC= 5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 15A ; VCE= 4V
Switching times
tr
Rise Time
ts
Storage Time
VCC= 30V, IC= 15A , IB1= -IB2= 1.5A,
tf
Fall Time
MIN MAX UNIT
100
V
2.0
V
3.0
V
0.5 mA
1.0 mA
35 200
20
1.2 μs
3.0 μs
1.8 μs
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