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| 2SD1025 Datasheet, PDF (2/3 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(8A NPN) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=10mA
VBEsat Base-emitter saturation voltage
IC=5A ;IB=10mA
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
VCB=200V ;IE=0
VCE=200V; IB=0
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=3V
fT
Transition frequency
IC=0.8A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A
IB1=- IB2=10mA
RL=5 ; VBB2=4V
Product Specification
2SD1025
MIN TYP. MAX UNIT
200
V
1.5
V
2.0
V
0.1
mA
0.1
mA
5.0
mA
1500
30000
20
MHz
2.0
s
8.0
s
5.0
s
2
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