2SCR572D Datasheet, PDF (2/2 Pages) Rohm – NPN 5.0A 30V Middle Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SCR572D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base breakdown voltage
IC=100uA
BVCEO Collector-Emitter breakdown voltage IC=1mA
BVEBO Emitter-Base breakdown voltage
IE=100uA
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 100mA
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 3V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fTNOTE
Current-Gain—Bandwidth Product
NOTE:Pulsed
IC= 0.5A; VCE= 10V,f= 100MHz
MIN TYP. MAX UNIT
30
V
30
V
6
V
0.4
V
1.0 μA
1.0 μA
200
500
30
pF
300
MHz
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