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| 2SC789 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC789
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25m A;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.2 A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2 A;IB=0.2 A
VCB=70V; IE=0
VEB=5V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
 hFE classifications
O
R
Y
40-80 70-140 120-240
MIN TYP. MAX UNIT
70
V
5
V
1.0
V
1.5
V
0.1 mA
0.1 mA
40
240
3
MHz
2
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