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| 2SC643 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.6A
ICBO
Collector cut-off current
VCB=500V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=2A ; VCE=15V
fT
Transition frequency
IC=0.1A ; VCE=10V
Product Specification
2SC643
MIN TYP. MAX UNIT
600
V
5
V
5.0
V
1.5
V
10
A
100
A
7
2
MHz
2
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