2SC6097 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6097
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 100mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
MIN TYP. MAX UNIT
0.15
V
0.135 V
1.2
V
50
V
6.5
V
1
μA
1
μA
300
600
18
pF
390
MHz
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