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| 2SC5803 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5803
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 2A
ICES
Collector Cutoff Current
VCE= 1400V; VBE= 0
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
5.5
Switching Times
tstg
Storage Time
tf
Fall Time
IC= 7A, IB1= 1.4A; IB2= -2.8A;
VCC= 200V; RL= 28.6Ω
3.0
V
1.5
V
1.0 mA
10 μA
1.0 mA
40
8.5
4.0 μs
0.3 μs
isc Websiteï¼www.iscsemi.cn
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