2SC5694 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5694
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 125mA
VBE(sat) Base-Emitter Saturation Voltage
IC=2.5A; IB= 125mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE=2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
60
V
50
V
6
V
0.26 V
1.2
V
0.1 μA
0.1 μA
150
300
330
MHz
28
pF
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