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| 2SC5669 Datasheet, PDF (2/4 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
V(BREBO Emitter-base breakdown voltage
IE=5mA; IC=0
VCEsat Collector-emitter saturation voltage IC=7.5 A;IB=0.75A
VBE
Base-emitter saturation voltage
IC=7.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=250V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7.5A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=1A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=7.5A;RL=6.67
IB1=-IB2=0.75A
VCC=50V
Product Specification
2SC5669
MIN TYP. MAX UNIT
230
V
250
V
6
V
0.2
2.0
V
1.5
V
100
A
100
A
60
160
35
200
pF
15
MHz
0.56
s
3.3
s
0.4
s
2
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