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| 2SC5244 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5244
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC=10A; IB=2.8A
VBE(sat) Base-Emitter Saturation Voltage
IC=10A; IB=2.8A
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
3.0 V
1.5 V
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50 μA
hFE
DC Current Gain
IC= 10A; VCE= 5V
5
12
fT
Current-GainâBandwidth Product
IC= 0.1A ; VCE= 10V
3
MHz
tstg
Storage Time
tf
Fall Time
IC= 12A, IB1=2.4A; IB2= -4.8A
1.5 2.5 μs
0.12 0.2 μs
isc websiteï¼www.iscsemi.cn
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