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| 2SC4369 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A ; VCE=2V
ICBO
Collector cut-off current
VCB=20V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
hFE-2
DC current gain
IC=2.5A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=2V
 hFE-1 Classifications
O
Y
70-140
120-240
Product Specification
2SC4369
MIN TYP. MAX UNIT
30
V
0.8
V
1.0
V
1.0
A
1.0
A
70
240
25
100
MHz
2
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