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| 2SC4330 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4330
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A ; IB= 0.3A, L= 1mH
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 0.4A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 6A; IB=B 0.3A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 8A; IB=B 0.4A
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 150V; IE= 0
VCE= 100V; VBE= -1.5V
VCE= 100V; VBE= -1.5V;Ta=125â
VEB= 5V; IC= 0
0.3
V
0.5
V
1.2
V
1.5
V
10 μA
10 μA
1.0 mA
10 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
100
hFE-2
DC Current Gain
IC= 2A ; VCE= 2V
100 200 400
hFE-3
DC Current Gain
IC= 6A ; VCE= 2V
60
 hFE-2 classifications
M
L
K
100-200 150-300 200-400
isc Websiteï¼www.iscsemi.cn
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