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| 2SC4296 Datasheet, PDF (2/2 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4296
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=B 1.2A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 6A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-GainâBandwidth Product
IE= -0.7A; VCE= 12V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 6A; IB1= 0.6A; IB2= -1.2A;
VCC= 200V; RL= 33Ω
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
100 μA
100 μA
10
30
85
pF
10
MHz
1.0 μs
3.0 μs
0.5 μs
isc Websiteï¼www.iscsemi.cn
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