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| 2SC4275 Datasheet, PDF (2/2 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4275
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.8A
ICBO
Collector Cutoff Current
VCB= 450V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A , IB1= 0.5A; IB2= -1A
RL= 30Ω; PW=20μs;
Duty Cycleâ¤2%
MIN TYP. MAX UNIT
400
V
500
V
10
V
0.8
V
1.2
V
0.1 mA
0.1 mA
25
65
1.0 μs
2.5 μs
0.5 μs
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