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| 2SC4274 Datasheet, PDF (2/4 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specifie
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=0.2A ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
Switching times
VCB=450V ;IE=0
VEB=10V; IC=0
IC=1A ; VCE=5V
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=200V; IC=5A
IB1=0.5A;IB2=-1A;
RL=30Ω
Product Specification
2SC4274
MIN TYP. MAX UNIT
500
V
400
V
10
V
0.8
V
1.2
V
100 μA
100 μA
25
55
1.0 μs
2.5 μs
0.5 μs
2
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