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| 2SC4252 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV TUNER, VHF OSCILLATOR APPLICATIONS) (COMMON COLLECTOR) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4252
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
1.0 μA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
12
V
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
40
250
fT
Current-GainâBandwidth Product
IC= 5mA;VCE= 10V ; f= 500MHz
1.5 2.1
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
1.1 1.4 pF
rbbâ ⢠CC Base Time Constant
IC= 5mA ; VCB= 10V;f= 30MHz
4.3
10
ps
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