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2SC4251 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV TUNER, VHF OSCILLATOR APPLICATIONS)
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4251
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
hFE
DC Current Gain
IC= 8mA ; VCE= 3V
fT
Current-Gain—Bandwidth Product
IC= 8mA;VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
rbb’ • CC Base Time Constant
IC= 8mA ; VCB= 10V;f= 30MHz
MIN TYP. MAX UNIT
0.1 μA
1.0 μA
15
V
40
200
650 1100
MHz
0.9 1.3 pF
7
12
ps
isc Website:www.iscsemi.cn
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