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| 2SC4249 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV VHF RF AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4249
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 25V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
0.1 μA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
30
V
hFE
DC Current Gain
IC= 2mA ; VCE= 10V
60
300
fT
Current-GainâBandwidth Product
IC= 2mA ; VCE= 10V
400 650
MHz
Cre
Feed-Back Capacitance
VCB= 10V; IE= 0; f= 1.0MHz
0.35 0.5 pF
Gpe
Power Gain
NF
Noise Figure
20 24 28 dB
VCC= 12V;VAGC= 1.4V;f= 200MHz
2
3.2 dB
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