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| 2SC4245 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4245
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
1.0 μA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
15
V
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
40
200
fT
Current-GainâBandwidth Product
IC= 2mA ; VCE= 10V
1500 2400
MHz
Cre
Feed-Back Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.6 0.9 pF
Gce
Conversion Gain
NF
Noise Figure
12
17
dB
IC= 2mA ; VCC= 10V; f= 800MHz
fL= 830MHz(+2dBm)
8
13
dB
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