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| 2SC4228 Datasheet, PDF (2/7 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4228
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 5mA ; VCE= 3V
fT
Current-GainâBandwidth Product IC= 5mA ; VCE= 3V ; f= 2GHz
Cre
Feed-Back Capacitance
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IE= 0 ; VCB= 3V; f= 1MHz
IC= 5mA ; VCE= 3V; f= 2GHz
IC= 5mA ; VCE= 3V; f= 2GHz
MIN TYP. MAX UNIT
1.0 μA
1.0 μA
50
250
5.5 8.0
GHz
0.3 0.7 pF
5.5 7.5
dB
1.9 3.2 dB
 hFE Classification
Class
R43
R44
R45
Marking R43
R44
R45
hFE
50-100 80-160 125-250
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