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| 2SC4197 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4197
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
ICEO
Collector Cutoff Current
VCE= 13V; RBE= â
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE
DC Current Gain
IC= 5mA ; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 20mA ; VCE= 5V
COB
Output Capacitance
CG
Conversion Gain
NF
Noise Figure
IE= 0 ; VCB= 10V;f= 1.0MHz
IC= 0.8mA ; VCC= 5V;
fin= 900MHz
fosc= 930MHz(-5dB),
fout= 30MHz
MIN TYP. MAX UNIT
25
V
0.3
V
0.1 μA
10 μA
0.3 μA
50
180
3.0 3.8
GHz
0.85 1.3 pF
19
dB
8
dB
isc websiteï¼www.iscsemi.cn
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