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| 2SC4163 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Switching Regulator Applications | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; RBE=â
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A
VBEsat Base-emitter saturation voltage
IC=8A ;IB=1.6A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.6A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
hFE-3
DC current gain
IC=10mA ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IC=1.6A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A; IB1=2A
IB2=-4A
VCC=200V ,RL=20Ω
 hFE-1 Classifications
L
M
N
15-30
20-40
30-50
Product Specification
2SC4163
MIN TYP. MAX UNIT
400
V
500
V
7
V
0.8
V
1.5
V
10
μA
10
μA
15
50
10
10
160
pF
20
MHz
0.5
μs
2.5
μs
0.3
μs
2
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