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2SC4150 Datasheet, PDF (2/3 Pages) Shindengen Electric Mfg.Co.Ltd – Switching Power Transistor(12A NPN)
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=0.3A
VBEsat Base-emitter saturation voltage
IC=6A; IB=0.3A
ICBO
Collector cut-off current
ICEO
Collector cut-off current
At rated volatge
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
Switching times
At rated volatge
IC=6A ; VCE=2V
IC=1.2A ; VCE=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=6A;IB1=0.6A
IB2=0.6A ,RL=5
VBB2=4V
Product Specification
2SC4150
MIN TYP. MAX UNIT
40
V
0.3
V
1.2
V
0.1
mA
0.1
mA
70
50
MHz
0.3
s
1.5
s
0.5
s
2