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| 2SC4123 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Very High-Definition Color Display Horizontal Deflection Output Applications | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A;IB=1.2 A
VBEsat Base-emitter saturation voltage
IC=5A;IB=1.2 A
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0
IEBO
Emitter cut-off current
ICBO
Collector cut-off current
ICES
Collector cut-off current
VEB=4V; IC=0
VCB=800V; IE=0
VCE=1500V; RBE=0
hFE-1
DC current gain
IC=1 A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
VF
Diode forward voltage
IEC=7A
Switching times
tstg
Storage time
tf
Fall time
IC=5A;RL=33.3Ω
IB1=1A;- IB2=2A
VCC=200V
Product Specification
2SC4123
MIN TYP. MAX UNIT
5
V
1.5
V
800
V
40
130
mA
10
μA
1
mA
8
4
6
2.0
V
3.0
μs
0.1
0.2
μs
2
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