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| 2SC4110 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Switching Regulator Applications | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4110
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= â
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 16A; IB= 3.2A
ICBO
Collector Cutoff Current
VCB= 400V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
hFE-3
DC Current Gain
fT
Current-GainâBandwidth Product
IC= 3.2A ; VCE= 5V
IC= 16A ; VCE= 5V
IC= 10mA ; VCE= 5V
IC= 3.2A ; VCE= 10V
COB
Output Capacitance
Switching Times
IE= 0; VCB= 10V; ftest= 1.0MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 20A, IB1= 4A; IB2= -8A
RL= 10Ω; VCC= 200V
 hFE-1 Classifications
L
M
N
15-30 20-40 30-50
MIN TYP. MAX UNIT
500
V
400
V
7
V
0.8
V
1.5
V
10 μA
10 μA
15
50
10
10
20
MHz
300
pF
0.5 μs
2.5 μs
0.3 μs
isc Websiteï¼www.iscsemi.cn
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