2SC4027 Datasheet, PDF (2/3 Pages) Unisonic Technologies – HIGH-VOLTAGE SWITCHING APPLICATIONS

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4027
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10uA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 10mA; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 50mA; VCE= 10V
MIN TYP. MAX UNIT
0.45 V
1.2
V
180
V
6
V
1.0 μA
1.0 μA
100
400
80
12
pF
120
MHz
 hFE-1 Classifications
R
S
T
100-200 140-280 200-400
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