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| 2SC4007 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4007
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.2A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 4V
fT
Current-GainâBandwidth Product
IE= -0.2A ; VCE= 12V
COB
Output Capacitance
IE=0 ; VCB= 10V; ftest= 1MHz
 hFE classifications
E
F
G
100-200 160-320 250-500
MIN TYP. MAX UNIT
100
V
80
V
6
V
1.0
V
1.5
V
10 μA
10 μA
100
500
10
MHz
60
pF
isc Websiteï¼www.iscsemi.cn
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