2SC4005 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Driver Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4005
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO Collector-Emitter Voltage
IC=1mA ; RBE=∞
42
58 V
VCBO Collector-Emitter Sustaining Voltage IC= 0.1mA ;I
60
V
VCE_(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A
VCE_(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A
VBE_(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB= 0.2A
VBE_(sat)-2 Base-Emitter Saturation Voltage
IC= 6A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 60V ; IE= 0
0.3 V
0.5 V
1.2 V
1.5 V
10 μA
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 60V ; RBE= 50Ω,Ta=125℃
VCE= 60V; VBE(off)= -1.5V
VCE= 60V; VBE(off)= -1.5V,Ta=125℃
VEB= 5V; IC= 0
1.0 mA
10 μA
1.0 mA
10 μA
hFE-1
DC Current Gain
IC= 0.7A ; VCE= 2V
100
hFE-2
DC Current Gain
IC= 1.5A ; VCE= 2V
100
400
hFE-3
DC Current Gain
IC= 4.0A ; VCE= 2V
60
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
100
pF
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V
150
MHz
Switching times
t_on
Turn-on Time
t_stg
Storage Time
t_f
Fall Time
IC= 4.0A ,RL= 12.5Ω,
IB1= -IB2= 0.2A,VCC≈ 50V
0.3 μs
1.5 μs
0.3 μs
 h_FE-2 Classifications
M
L
K
100-200 150-300 200-400
isc Website：www.iscsemi.cn
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